Breakdown voltage in thin III–V avalanche photodiodes
نویسندگان
چکیده
The dead-space multiplication theory of Hayat and Saleh @J. Lightwave Technol. 10, 1415 ~1992!#, in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. @IEEE Trans. Electron Devices 47, 625 ~2000!#, are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate. © 2001 American Institute of Physics. @DOI: 10.1063/1.1425463#
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